BAW56LT1 01/14/2007 rev. 1.00 www.siliconstandard.com 1 switching diode features ? power dissipation, p d : 225 mw (t a =25 ) ? forward current, i f : 200 ma ? reverse voltage, v r : 70 v ? operating and storage junction temperature range: t j , t stg : -55 to +150 ? sot-23 plastic-encapsulate package electrical characteristics note : unless otherwise specified, these specifications apply over the operating ambient temperature of 25 . device makin g : a 1
BAW56LT1 01/14/2007 rev. 1.00 www.siliconstandard.com 2 disclaimer information furnished by silicon standard corporation is belie ved to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result fr om its use. silicon standard reserves the ri ght to make changes as it deems necessary to any products described herein for any reason, including wit hout limitation enhancement in reli ability, functionality or desi gn. no license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the u se of any information provided herein, under any patent or other inte llectual property rights of silicon standard corporation or a ny third parties.
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